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Part #: SSG3110-C
ActivePart Category:Power Field-Effect Transistors
Manufacturer:SECOS CORP
Description:Power Field-Effect Transistor, 2.2A I(D), 100V, 0.31ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
SSG3110-C SPECIFICATIONS
| Status | Active |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.3100000000000000 |
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