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Part #: SSD2007
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 2A I(D), 50V, 0.3ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SSD2007 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS |
| DS Breakdown Voltage-Min (V) | 50.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.3000000000000000 |
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