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Part #: SQ3585EV
OtherPart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 3.57A I(D), 20V, 0.12ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C
SQ3585EV SPECIFICATIONS
| Status | Unknown |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.5700000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1200000000000000 |
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