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SQ2364EES Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: SQ2364EES
ActivePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 2A I(D), 60V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2364EES SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1.2500000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
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