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SP001551996 Datasheet - INFINEON TECHNOLOGIES AG - Datasheets360.comPart #: SP001551996
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:INFINEON TECHNOLOGIES AG
Description:Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
SP001551996 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) (mJ) | 110.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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