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SM8S17A2E Datasheet - GENERAL SEMICONDUCTOR INC - Datasheets360.comPart #: SM8S17A2E
OtherPart Category:Transient Suppressors
Manufacturer:GENERAL SEMICONDUCTOR INC
Description:Trans Voltage Suppressor Diode, 5200W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB
SM8S17A2E SPECIFICATIONS
| Status | Transferred |
| Additional Feature | PATENTED DEVICE |
| Breakdown Voltage-Max (V) | 20.9000 |
| Breakdown Voltage-Min (V) | 18.9000000000000000 |
| Breakdown Voltage-Nom (V) | 19.9000 |
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