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Part #: SJMN04A60F
OtherPart Category:Power Field-Effect Transistors
Manufacturer:KODENSHI AUK CORP
Description:Power Field-Effect Transistor, 4A I(D), 600V, 0.93ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-220AB
SJMN04A60F SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 130.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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