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Part #: SJM65R600D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 8A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
SJM65R600D SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE : 80 |
| Avalanche Energy Rating (Eas) (mJ) | 130.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
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