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SJ90R350F Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: SJ90R350F
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 15A I(D), 900V, 0.365ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-220AB
SJ90R350F SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 280.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
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