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SIE882DF-T1-GE3 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: SIE882DF-T1-GE3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 60A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SIE882DF-T1-GE3 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Avalanche Energy Rating (Eas) (mJ) | 125.0000000000000000 |
| Case Connection | DRAIN SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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