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Part #: SI9926BDY-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 6.2A I(D), 20V, 0.02ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SI9926BDY-E3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0200000000000000 |
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SI9926BDY-E3 Datasheet & Equivalents - VISHAY SILICONIX - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #SI9926BDY-E3
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