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SI9801DY-E3 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: SI9801DY-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 4.5A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
SI9801DY-E3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0550000000000000 |
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