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Part #: SI8902EDB-T2-E1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 3.9A I(D), 20V, 0.072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SI8902EDB-T2-E1 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | ESD PROTECTED, ULTRA-LOW RESISTANCE |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.9000000000000000 |
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Equivalent Parts: Part #SI8902EDB-T2-E1
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