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SI8435DB-T1-E1 Datasheet - VISHAY SILICONIX - Datasheets360.comPart #: SI8435DB-T1-E1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 6.72A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI8435DB-T1-E1 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | LOW THRESHOLD |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.7200000000000000 |
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