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SI8410DB-T2-E1 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: SI8410DB-T2-E1
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Small Signal Field-Effect Transistor, 5.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SI8410DB-T2-E1 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.7000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0370000000000000 |
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