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Part #: SI5853DDC-T1-GE3
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI5853DDC-T1-GE3 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.9000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1050000000000000 |
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