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Part #: SI5515CDC-T1-E3
OtherPart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
SI5515CDC-T1-E3 SPECIFICATIONS
| Status | Transferred |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0360000000000000 |
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