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Part #: SI4967DY-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Trench Mosfet FET
SI4967DY-E3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| Drain Current-Max (ID) (A) | 7.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0230000000000000 |
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