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SI4946BEY-T1-E3 Datasheet - VISHAY SILICONIX - Datasheets360.comPart #: SI4946BEY-T1-E3
OtherPart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
SI4946BEY-T1-E3 SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 7.2000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.5000000000000000 |
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