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SI4484EY-T1-E3 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: SI4484EY-T1-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 4.8A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, MS-012AA
SI4484EY-T1-E3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.8000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0340000000000000 |
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