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Part #: SI4466DY
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TEMIC SEMICONDUCTORS
Description:Power Field-Effect Transistor, 13.2A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SI4466DY SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 13.2000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0090000000000000 |
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