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Part #: SI3476DV-T1-GE3
ActivePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 4.6A I(D), 80V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
SI3476DV-T1-GE3 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 80.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.6000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0930000000000000 |
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Equivalent Parts: Part #SI3476DV-T1-GE3
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