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Part #: SI2325DS-T1-E3
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Small Signal Field-Effect Transistor, 0.53A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SI2325DS-T1-E3 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 150.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.5300000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.3000000000000000 |
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SI2325DS-T1-E3 Datasheet & Equivalents - VISHAY INTERTECHNOLOGY INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #SI2325DS-T1-E3
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