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Part #: SI2319DDS-T1-GE3
ActivePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Power Field-Effect Transistor, 3.6A I(D), 40V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SI2319DDS-T1-GE3 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1.2500000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.6000000000000000 |
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