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Part #: SI2315DS-E3
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 3.5A I(D), 12V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
SI2315DS-E3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0550000000000000 |
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