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SI1013R-E3 Datasheet - VISHAY INTERTECHNOLOGY INC - Datasheets360.comPart #: SI1013R-E3
ObsoletePart Category:Small Signal Field-Effect Transistors
Manufacturer:VISHAY INTERTECHNOLOGY INC
Description:Small Signal Field-Effect Transistor, 0.35A I(D), 20V, 1-Element, P-Channel, Silicon, Trench Mosfet FET
SI1013R-E3 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.3500000000000000 |
| Drain-source On Resistance-Max (ohm) | 1.2000000000000000 |
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