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SH8K25TB Datasheet - ROHM CO LTD - Datasheets360.comPart #: SH8K25TB
ActivePart Category:Power Field-Effect Transistors
Manufacturer:ROHM CO LTD
Description:Power Field-Effect Transistor, 4A I(D), 40V, 0.112ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SH8K25TB SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 0.4800000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.0000000000000000 |
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