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Part #: SH32N65DM6AG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 32A I(D), 650V, 0.097ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SH32N65DM6AG SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 778.0000000000000000 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 32.0000000000000000 |
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