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Part #: SGR2N60UFD
ObsoletePart Category:Insulated Gate Bipolar Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel
SGR2N60UFD SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | HIGH SPEED SWITCHING |
| Collector Current-Max (IC) (A) | 2.4000000000000000 |
| Collector-emitter Voltage-Max (V) | 600.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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SGR2N60UFD Datasheet & Equivalents - SAMSUNG SEMICONDUCTOR INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #SGR2N60UFD
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