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SF2N06L Datasheet - SAMSUNG SEMICONDUCTOR INC - Datasheets360.comPart #: SF2N06L
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 2A I(D), 60V, 0.11ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
SF2N06L SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
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