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SCT040H65G3AG Datasheet - STMICROELECTRONICS - Datasheets360.comPart #: SCT040H65G3AG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 30A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
SCT040H65G3AG SPECIFICATIONS
| Status | Active |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 30.0000000000000000 |
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