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Part #: S9G08A
ActivePart Category:RF Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
S9G08A SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 15.0000000000000000 |
| Drain Current-Max (ID) (A) | 13.0000000000000000 |
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