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Part #: S8MNG030
OtherPart Category:Power Field-Effect Transistors
Manufacturer:ERIS TECHNOLOGY CORP
Description:Power Field-Effect Transistor, 5A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET
S8MNG030 SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 26.5000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
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