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Part #: S3514
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 5A I(D), N-Channel, Metal-oxide Semiconductor FET
S3514 SPECIFICATIONS
| Status | Unknown |
| Configuration | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.5 |
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