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Part #: S2M0120120D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:SANGDEST MICROELECTRONICS (NANJING) CO LTD
Description:Power Field-Effect Transistor, 21A I(D), 1200V, 0.15ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247AD
S2M0120120D SPECIFICATIONS
| Status | Active |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 21.0000000000000000 |
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