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RT3U11M Datasheet - ISAHAYA ELECTRONICS CORP - Datasheets360.comPart #: RT3U11M
OtherPart Category:Small Signal Field-Effect Transistors
Manufacturer:ISAHAYA ELECTRONICS CORP
Description:Small Signal Field-Effect Transistor, 0.1A I(D), 50V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
RT3U11M SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 50.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.1000000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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