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Part #: RMD8N40S8
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 8A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RMD8N40S8 SPECIFICATIONS
| Status | Active |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0220000000000000 |
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