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Part #: RM6A2N250LD
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 6.2A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RM6A2N250LD SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 115.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 250.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.2000000000000000 |
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