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RM5N650IP Datasheet - RECTRON LTD - Datasheets360.comPart #: RM5N650IP
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 5A I(D), 650V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
RM5N650IP SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 52.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
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