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RM5N30S6 Datasheet - RECTRON LTD - Datasheets360.comPart #: RM5N30S6
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 5A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RM5N30S6 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
| Drain Current-Max (ID) (A) | 5.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0280000000000000 |
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