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RM33N100T2 Datasheet - RECTRON LTD - Datasheets360.comPart #: RM33N100T2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RM33N100T2 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 33.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0400000000000000 |
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