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Part #: RM2520ES6
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Small Signal Field-Effect Transistor, 1.1A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET
RM2520ES6 SPECIFICATIONS
| Status | Active |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 25.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.1000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.6000000000000000 |
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