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Part #: RM2312
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 4.5A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RM2312 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0330000000000000 |
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