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Part #: RM200N85HD
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 200A I(D), 85V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
RM200N85HD SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 1767.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 85.0000000000000000 |
| Drain Current-Max (ID) (A) | 200.0000000000000000 |
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