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Part #: RM200N120T7
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 180A I(D), 120V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
RM200N120T7 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 720.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 120.0000000000000000 |
| Drain Current-Max (ID) (A) | 180.0000000000000000 |
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