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RM170N30DF Datasheet - RECTRON LTD - Datasheets360.comPart #: RM170N30DF
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 170A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
RM170N30DF SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 890.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 30.0000000000000000 |
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