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Part #: RM10N100LD
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 10A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
RM10N100LD SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE: 80 |
| Avalanche Energy Rating (Eas) (mJ) | 20.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
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