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Part #: RM1002V
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RECTRON LTD
Description:Power Field-Effect Transistor, 2A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
RM1002V SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2200000000000000 |
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