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Part #: RFP7N35
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:HARRIS SEMICONDUCTOR
Description:Power Field-Effect Transistor, 7A I(D), 350V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
RFP7N35 SPECIFICATIONS
| Status | Discontinued |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 350.0000000000000000 |
| Drain Current-Max (ID) (A) | 7.0000000000000000 |
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RFP7N35 Datasheet & Equivalents - HARRIS SEMICONDUCTOR - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #RFP7N35
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