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RFP12P10 Datasheet - NEW JERSEY SEMICONDUCTOR PRODUCTS INC - Datasheets360.comPart #: RFP12P10
ActivePart Category:Power Field-Effect Transistors
Manufacturer:NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Description:Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RFP12P10 SPECIFICATIONS
| Status | Active |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 12.0000000000000000 |
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